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| TIP32 Datasheet, PDF (1/2 Pages) Power Innovations Ltd – PNP SILICON POWER TRANSISTORS | |||
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TO-220-3L Plastic-Encapsulate Transistors
TIP32/32A/32B/32C TRANSISTOR (PNP)
FEATURES
Medium Power Linear Switching Applications
TO-220-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
TIP32
VCBO Collector-Base Voltage
-40
VCEO Collector-Emitter Voltage
-40
VEBO Emitter-Base Voltage
IC
Collector Current
PC
Collector Power Dissipation
RθJA Thermal Resistance from Junction to Ambient
Tj
Junction Temperature
Tstg
Storage Temperature
TIP32A TIP32B
-60
-80
-60
-80
-5
-3
2
62.5
150
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
TIP32
TIP32A
TIP32B
TIP32C
V(BR)CBO
IC= -1mA, IE=0
Collector-emitter breakdown voltage * TIP32
Emitter-base breakdown voltage
TIP32A
TIP32B
TIP32C
Collector cut-off current
TIP32
TIP32A
TIP32B
TIP32C
Collector cut-off current
TIP32/32A
TIP32B/32C
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
* Pulse Test: PWâ¤300µs, Duty Cycleâ¤2%.
VCEO(sus)
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(on)
fT
IC= -30mA, IB=0
IE= -1mA, IC=0
VCB=-40V,IE=0
VCB=-60V, IE=0
VCB=-80V, IE=0
VCB=-100V, IE=0
VCE= -30V, IB= 0
VCE= -60V, IB= 0
VEB=-5V, IC=0
VCE= -4V, IC=-1A
VCE=-4 V, IC=-3A
IC=-3A, IB=-0.375A
VCE=-4V, IC=-3A
VCE=-10V , IC=-0.5A
TIP32C
-100
-100
Min
-40
-60
-80
-100
-40
-60
-80
-100
-5
25
15
3
Unit
V
V
V
A
W
â
â
M ax
-200
-0.3
-1
75
-1.2
-1.8
Unit
V
V
V
μA
mA
mA
V
V
MHz
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