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| TIP122F Datasheet, PDF (1/1 Pages) Continental Device India Limited – NPN/PNP SILICON POWER DARLINGTON TRANSISTORS | |||
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Product specification
TO-220F Plastic-Encapsulate Transistors
TIP120F,121F,122F DARLINGTON TRANSISTOR (NPN)
TIP125F,126F,127F DARLINGTON TRANSISTOR (PNP)
FEATURES
Medium Power Complementary Silicon Transistors
TO-220F
1.BASE
2.COLLECTOR
3.EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
RθJA
RθJC
TJ
Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
TIP120F
TIP125F
60
60
TIP121F
TIP126F
80
80
5
5
2
62.5
1.92
150
-55~+150
TIP122F
TIP127F
100
100
Unit
V
V
V
A
W
â/W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage TIP120F,TIP125F
TIP121F,TIP126F
TIP122F,TIP127F
Collector-emitter breakdown voltage TIP120F,TIP125F
TIP121F,TIP126F
TIP122F,TIP127F
Collector cut-off current
TIP120F,TIP125F
TIP121F,TIP126F
TIP122F,TIP127F
Collector cut-off current
TIP120F,TIP125F
TIP121F,TIP126F
TIP122F,TIP127F
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Output Capacitance
TIP125F,TIP126F,TIP127F
TIP120F,TIP121F,TIP122F
Symbol
V(BR)CBO
VCEO(SUS)
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
Cob
Test conditions
IC= 1mA,IE=0
IC= 30mA,IB=0
VCB= 60 V, IE=0
VCB= 80 V, IE=0
VCB= 100V, IE=0
VCE=30 V, IB=0
VCE=40 V, IB=0
VCE=50 V, IB=0
VEB=5 V, IC=0
VCE= 3V, IC=0.5A
VCE= 3V, IC=3 A
IC=3A,IB=12mA
IC=5 A,IB=20mA
VCE=3V, IC=3 A
VCB=10V, IE=0,f=0.1MHz
Min
60
80
100
60
80
100
Max Unit
V
V
0.2
mA
0.5
mA
2
mA
1000
1000
2
4
V
2.5
V
300
pF
200
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