TIP117 Datasheet, PDF(1/1 Page) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

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TIP117 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

Product specification

TO-220-3L Plastic-Encapsulate Transistors

TIP117 TRANSISTOR (PNP)

FEATURES

z High DC Current Gain

z Low Collector-Emitter Saturation Voltage

z Complementary to TIP112

TO-220-3L

1. BASE

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (Ta=25â unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

RÎ¸JA

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

-100

-5

-2

150

-55~+150

Unit

â/W

ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Collector output capacitance

*Pulse test

Symbol

V(BR)CBO

V(BR)CEO*

V(BR)EBO

ICBO

ICEO

IEBO

hFE(1)

hFE(2)

VCE(sat)

VBE

Cob

Test conditions

IC=-1mA,IE=0

IC=-30mA,IB=0

IE=-5mA,IC=0

VCB=-100V,IE=0

VCE=-50V,IB=0

VEB=-5V,IC=0

VCE=-4V, IC=-1A

VCE=-4V, IC=-2A

IC=-2A,IB=-8mA

VCE=-4V, IC=-2A

VCB=-10V,IE=0, f=0.1MHz

Min Typ

-100

-5

1000

500

Max

-1

-2

-2.5

-2.8

200

Unit

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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