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| TIP110 Datasheet, PDF (1/1 Pages) Mospec Semiconductor – POWER TRANSISTORS(2.0A,60-100V,50W) | |||
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Product specification
TO-220-3L Plastic-Encapsulate Transistors
TIP110 DARLINGTON TRANSISTOR (NPN)
FEATURES
z High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.)
z Low Collector-Emitter Saturation Voltage
z Industrial Use
TO-220-3L
1. BASE
2. COLLECTOR
MAXIMUM RATINGS (Ta=25 â unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
2
A
PC
Collector Power Dissipation
2
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55 to +150
â
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Symbol Test conditions
V(BR)CBO IC=10mA,IE=0
VCEO(sus) IC=30mA,IB=0
V(BR)EBO IE=10mA,IC=0
ICEO
VCE=30V,IB=0
ICBO
VCB=60V,IE=0
IEBO
VEB=5V,IC=0
hFE(1) VCE=4V,IC=1A
hFE(2) VCE=4V,IC=2A
VCE(sat) IC=2A,IB=8mA
VBE
VCE=4V,IC=2A
Cob
VCB=10V,IE=0,f=0.1MHz
Min Typ Max Unit
60
V
60
V
5
V
2
mA
1
mA
2
mA
1000
500
2.5
V
2.8
V
100 pF
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