STTH302S Datasheet, PDF (1/3 Pages) STMicroelectronics – HIGH EFFICIENCY ULTRAFAST DIODE

Product specification
STTH302S
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
I_F(AV)
V_RRM
Tj (max)
3A
200 V
175 °C
V_F (max)
trr (max)
0.75 V
35 ns
FEATURES AND BENEFITS
s Very low conduction losses
s Negligible switching losses
s Low forward and reverse recovery times
s High junction temperature
DESCRIPTION
The STTH302S, which is using ST’s new 200V
planar technology, is specially suited for switching
mode base drive & transistor circuits.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
SMC
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
V_RRM Repetitive peak reverse voltage
I_F(AV) Average forward current
Tl = 107°C δ =0.5
I_FSM Surge non repetitive forward current
tp = 10 ms Sinusoidal
T_stg Storage temperature range
Tj Maximum operating junction temperature
Value
200
3
100
- 65 + 175
175
Unit
V
A
A
°C
°C
THERMAL PARAMETERS
Symbol
R_{th (j-l)} Junction to lead
Parameter
Maximum
20
Unit
°C/W
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