STS8235 Datasheet, PDF (1/2 Pages) SamHop Microelectronics Corp. – Dual N-Channel Enhancement Mode Field Effect Transistor

Product specification
STS8235
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (mΩ) Max
36 @ VGS=4.5V
30V
4.5A
46 @ VGS=2.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
E S D P rotected.
S1
D1/D2
S2
S OT 26
Top View
16
25
34
G1
D1/D2
G2
D1
D2
G1
G2
S1
S2
ABSOLUTE MAXIMUM RATINGS (TA=25^°C unless otherwise noted⁾
Symbol Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
ID
Drain Current-Continuous ^a
I_DM
-Pulsed ^b
TA=25°C
TA=70°C
P_D
Maximum Power Dissipation ^a
T_A=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R _JA
Thermal Resistance, Junction-to-Ambient ^a
Limit
30
±10
4.5
3.6
18
1.25
0.8
-55 to 150
100
Units
V
V
A
A
A
A
W
°C
°C/W
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