STS8215 Datasheet, PDF (1/3 Pages) SamHop Microelectronics Corp. – Dual N-Channel E nhancement Mode F ield E ffect Transistor

Product specification
S TS 8215
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m Ω ) Max
20V
5A
27.5 @ VGS = 4.0V
38 @ VGS = 2.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
E S D P rotected.
S1
D1/D2
S2
S OT 26
Top View
16
25
34
G1
D1/D2
G2
D1
D2
G1
G2
S1
S2
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS
20
V
Gate-S ource Voltage
VGS
10
V
Drain C urrent-C ontinuous ^a @ TJ=25 C
ID
5
A
-P ulsed ^b
IDM
24
A
Drain-S ource Diode Forward C urrent ^a
IS
1.25
A
Maximum P ower Dissipation ^a
PD
1.25
W
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient ^a
R JA
100
C /W
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