STS6601 Datasheet, PDF (1/2 Pages) SamHop Microelectronics Corp. – P-Channel Enhancement Mode Field Effect Transistor

Product specification
STS6601
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (mΩ) Max
-60V
-3.2A
110 @ VGS=-10V
160 @ VGS=-4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
SOT-26 package.
S OT 26
Top View
D ₁₆ D
D 25 D
G ³⁴ S
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25^°C unless otherwise noted⁾
Symbol Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current-Continuous ^a
I_DM
-Pulsed ^b
TA=25°C
TA=70°C
P_D
Maximum Power Dissipation ^a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R _JA
Thermal Resistance, Junction-to-Ambient ^a
Limit
-60
±20
-3.2
-2.6
-12
2
1.28
-55 to 150
62.5
Units
V
V
A
A
A
W
W
°C
°C/W
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4008-318-123
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