STS3414 Datasheet, PDF (1/2 Pages) SamHop Microelectronics Corp. – N-Channel Enhancement Mode Field Effect Transistor

Product specification
STS3414
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (mΩ) Max
50 @ VGS=10V
30V
4A
60 @ VGS=4.5V
75 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
SOT-23 package.
S OT-23
D
S
G
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25^°C unless otherwise noted⁾
Symbol Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current-Continuous ^a
TA=25°C
I_DM
-Pulsed ^b
P_D
Maximum Power Dissipation ^a
TA=25°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R _JA
Thermal Resistance, Junction-to-Ambient ^a
Limit
30
±12
4
15
1.25
-55 to 150
100
Units
V
V
A
A
W
°C
°C/W
http://www.twtysemi.com
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4008-318-123
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