STS2622 Datasheet, PDF (1/3 Pages) SamHop Microelectronics Corp. – Dual N-Channel Enhancement Mode Field Effect Transistor

Product specification
S TS 2622
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m W ) Max
80 @ VGS = 4.5V
20V
2.5A
110 @ VGS = 2.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
TS OP 6 package.
TSOP6
Top View
G1 _{1 6} D1
S1 2 5 S2
G2 ³ 4 D2
D1
D2
G1
S1
G2
S2
AB S OL UTE MAXIMUM R ATING (TA=25 C unles s otherwis e noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS
20
V
Gate-S ource Voltage
VGS
10
V
Drain C urrent-C ontinuous ^a @ Tc=25 C
ID
2.5
A
-P ulsed ^b
IDM
8
A
Drain-S ource Diode Forward C urrent ^a
IS
1.25
A
Maximum P ower Dissipation ^a
PD
1
W
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient ^a
R thJA
125
C /W
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