STS2300S Datasheet, PDF (1/3 Pages) SamHop Microelectronics Corp. – N-Channel E nhancement Mode Field Effect Transistor

Product specification
S TS 2300S
P R ODUC T S UMMAR Y
VDS S
ID
20V
6A
R DS (ON) ( m W ) Max
35 @ VGS = 4.5V
45 @ VGS = 2.5V
F E AT UR E S
S uper high dense cell design for low R DS (ON).
R ugged and reliable.
S OT-23 package.
S OT-23
D
S
G
D
G
S
AB S OL UTE MAXIMUM R ATING (TA=25 C unles s otherwis e noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS
20
V
Gate-S ource Voltage
VGS
12
V
Drain C urrent-C ontinuous @ TJ=25 C
ID
6
A
-P ulsed ^b
IDM
20
A
Drain-S ource Diode Forward C urrent
IS
1.25
A
Maximum P ower Dissipation^a
PD
1.25
W
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient ^a
R thJA
100
C /W
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