ST3413A Datasheet, PDF (1/3 Pages) Stanson Technology – P Channel Enhancement Mode MOSFET

Product specification
ST3413A
DESCRIPTION
ST3413A is the P-Channel logic enhancement mode power field effect transistor which is
produced using high cell density, DMOS trench technology. This high density process is
especially tailored to minimize on-state resistance. These devices are particularly suited
for low voltage application such as cellular phone and notebook computer power
management, other battery powered circuits, and low in-line power loss are required. The
product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23
3
D
G
S
1
2
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23
FEATURE
-20V/-3.4A, R_DS(ON) = 70mΩ (Typ.)
@VGS = -4.5V
-20V/-2.4A, R_DS(ON) = 80mΩ
@VGS = -2.5V
-20V/-1.7A, R_DS(ON) = 125mΩ
@VGS = -1.8V
Super high density cell design for
extremely low R_DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23 package design
3
13YA
1
2
Y: Year Code A: Week Code
http://www.twtysemi.com
[e-mail]
4008-318-123
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