ST3401SRG Datasheet, PDF (1/3 Pages) Stanson Technology – ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.

Product specification
ST3401SRG
DESCRIPTION
ST3401RSG is the P-Channel logic enhancement mode power field effect transistor
which is produced using high cell density DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23
FEATURE
3
D
G
S
1
2
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23
-30V/-4.0A, R_DS(ON) = 55mΩ (Typ.)
@VGS = -10V
-30V/-3.2A, R_DS(ON) = 62mΩ
@VGS = -4.5V
-30V/-1.2A, R_DS(ON) = 90mΩ
@VGS = -2.5V
Super high density cell design for
Extremely low R_DS(ON)
Exceptional on-resistance and
maximum DC current capability
SOT-23 package design
3
A1YA
1
2
Y: Year Code A: Process Code
http://www.twtysemi.com
[e-mail]
4008-318-123
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