ST2341A Datasheet, PDF (1/3 Pages) Stanson Technology – ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

Product specification
ST2341A
DESCRIPTION
ST2341A is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and low in-line power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
3
D
G
S
1
2
FEATURE
-30V/-6.0A, R_DS(ON) = 20m-ohm (Typ.)
@VGS = -10V
-30V/-3.8A, R_DS(ON) = 28m-ohm
@VGS = -4.5V
Super high density cell design for
extremely low R_DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23-3L package design
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23-3L
3
41YA
1
2
Y: Year Code A: Process Code
http://www.twtysemi.com
[e-mail]
4008-318-123
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