ST2302M Datasheet, PDF (1/3 Pages) Stanson Technology – N Channel Enhancement Mode MOSFET

Product specification
ST2302M
DESCRIPTION
The ST2302M is the N-Channel logic enhancement mode power field effect transistor
are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone
and notebook computer power management and other batter powered circuits, and
low in-line power loss are needed in a very small outine surface mount package.
PIN CONFIGURATION
SOT-23
3
D
G
S
1
2
FEATURE
z 20V/3.6A, R_DS(ON) = 90m-ohm (Typ.)
@VGS = 4.5V
z 20V/3.1A, R_DS(ON) = 130m-ohm
@VGS = 2.5V
z Super high density cell design for
extremely low R_DS(ON)
z Exceptional on-resistance and maximum
DC current capability
z SOT-23 package design
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23
3
S02YA
1
2
Y: Year Code A: Process Code
ORDERING INFORMATION
Part Number
Package
Part Marking
ST2302MSRG
SOT-23
S02YA
※ Process Code : A ~ Z ; a ~ z
※ ST2302MSRG S : SOT-23 ; R : Tape Reel ; G : Pb – Free
http://www.twtysemi.com
[e-mail]
4008-318-123
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