SSM6N35FE Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – Field-Effect Transistor Silicon N-Channel MOS Type

Product specification
SSM6N35FE
○ High-Speed Switching Applications
○ Analog Switch Applications
• 1.2-V drive
• N-ch 2-in-1
• Low ON-resistance: R_on = 20 Ω (max) (@V_GS = 1.2 V)
: R_on = 8 Ω (max) (@V_GS = 1.5 V)
: R_on = 4 Ω (max) (@V_GS = 2.5 V)
: R_on = 3 Ω (max) (@V_GS = 4.0 V)
1.6±0.05
1.2±0.05
Unit: mm
1
6
2
5
3
4
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain–source voltage
Gate–source voltage
Drain current
DC
Pulse
V_DSS
V_GSS
I_D
I_DP
20
V
±10
V
180
mA
360
1.Source1
2.Gate1
3.Drain2
4.Source2
5.Gate2
6.Drain1
Drain power dissipation
P_D(Note 1)
150
mW
Channel temperature
T_ch
150
°C
Storage temperature
T_stg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 3.0 mg (typ.)
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease
in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the TY Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Total rating
Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm² × 6)
Marking
6
5
4
KZ
1
2
3
Equivalent Circuit (top view)
6
5
4
Q1
Q2
1
2
3
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