SSM6N17FU Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – High Speed Switching Applications Analog Switch Applications

High Speed Switching Applications
Analog Switch Applications
· Suitable for high-density mounting due to compact package
· High drain-source voltage
· High speed switching
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
50
V
Gate-Source voltage
V_GSS
±7
V
Drain current
DC
Pulse
I_D
100
mA
I_DP
200
Drain power dissipation (Ta = 25°C)
P_D (Note)
200
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55~150
°C
Note: Total rating,Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm² × 6)
0.4 mm
Product specification
SSM6N17FU
Unit: mm
Weight: 6.8 mg (typ.)
Marking
6
5
4
DM
1
2
3
Equivalent Circuit
6
5
4
Q1
Q2
1
2
3
This transistor is a electrostatic sensitive device. Please handle with caution.
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