SSM6L35FE Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – High-Speed Switching Applications Analog Switch Applications

Product specification
SSM6L35FE
○ High-Speed Switching Applications
○ Analog Switch Applications
• N-ch: 1.2-V drive
P-ch: 1.2-V drive
• N-ch, P-ch, 2-in-1
• Low ON-resistance Q1 N-ch: R_on = 20 Ω (max) (@V_GS = 1.2 V)
: R_on = 8 Ω (max) (@V_GS = 1.5 V)
: R_on = 4 Ω (max) (@V_GS = 2.5 V)
: R_on = 3 Ω (max) (@V_GS = 4.0 V)
Q2 P-ch: R_on = 44 Ω (max) (@V_GS = -1.2 V)
: R_on = 22 Ω (max) (@V_GS = -1.5 V)
: R_on = 11 Ω (max) (@V_GS = -2.5 V)
: R_on = 8 Ω (max) (@V_GS = -4.0 V)
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain–source voltage
V_DSS
20
V
Gate–source voltage
V_GSS
±10
V
Drain current
DC
I_D
Pulse
I_DP
180
mA
360
Q2 Absolute Maximum Ratings (Ta = 25°C)
1.6±0.05
1.2±0.05
Unit: mm
1
6
2
5
3
4
1.Source1 4.Source2
2.Gate1 5.Gate2
3.Drain2 6.Drain1
Weight: 3.0 mg (typ.)
Characteristics
Symbol
Rating
Unit
Drain–source voltage
Gate–source voltage
Drain current
DC
Pulse
V_DSS
V_GSS
I_D
I_DP
-20
V
±10
V
-100
mA
-200
Absolute Maximum Ratings (Ta = 25 °C) (Common to the Q1, Q2)
Characteristic
Symbol
Rating
Unit
Drain power dissipation
P_D(Note 1)
150
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the TY Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Total rating
Mounted on an FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm² × 6)
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