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| SSM6K06FU Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – High Speed Switching Applications | |||
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Product specification
SSM6K06FU
High Speed Switching Applications
· Small package
· Low on resistance : Ron = 160 m⦠max (@VGS = 4 V)
: Ron = 210 m⦠max (@VGS = 2.5 V)
· Low gate threshold voltage
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC
Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
VDS
20
V
VGSS
±12
V
ID
1.1
A
IDP
2.2
PD
300
mW
(Note 1)
Tch
150
°C
Tstg
-55~150
°C
Note 1: Mounted on FR4 board.
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 0.32 mm2 ´ 6) Figure 1.
Unit: mm
Weight: 6.8 mg (typ.)
Marking
Equivalent Circuit (top view)
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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