SSM6J07FU Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TOSHIBA Transistor Silicon P Channel MOS Type

Power Management Switch
High Speed Switching Applications
· Small package
· Low on resistance
: Ron = 450 mΩ (max) (VGS = −10 V)
: Ron = 800 mΩ (max) (VGS = −4 V)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DS
-30
V
Gate-source voltage
V_GSS
±20
V
Drain current
DC
I_D
Pulse
I_DP
-0.8
A
-1.6
Drain power dissipation
P_D (Note1)
300
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
-55~150
°C
Note 1: Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.32 mm² ´ 6)
Marking
654
Equivalent Circuit
Figure 1:
(top view)
6 54
KDF
Product specification
SSM6J07FU
Unit: mm
Weight: 6.8 mg (typ.)
25.4 mm ´ 25.4 mm ´ 1.6 t,
Cu Pad: 0.32 mm² ´ 6
0.4 mm
123
123
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