SSM3K7002BFU Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – High-Speed Switching Applications Analog Switch Applications

Product specification
High-Speed Switching Applications
Analog Switch Applications
SSM3K7002BFU
Unit: mm
• Small package
• Low ON-resistance : R_DS(ON) = 3.3 Ω (max) (@V_GS = 4.5 V)
: R_DS(ON) = 2.6 Ω (max) (@V_GS = 5 V)
: R_DS(ON) = 2.1 Ω (max) (@V_GS = 10 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DSS
60
V
Gate-source voltage
V_GSS
± 20
V
Drain current
DC
Pulse
I_D
200
mA
I_DP
800
Drain power dissipation (Ta = 25°C) P_D (Note 1)
150
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 6.0 mg (typ.)
Please design the appropriate reliability upon reviewing the
TY Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.6mm² × 3)
0.6 mm
1.0 mm
Marking
3
NM
1
2
Equivalent Circuit (top view)
3
1
2
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