SSM3K309T Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – Power Management Switch Applications

Product specification
○ Power Management Switch Applications
○ High-Current Switching Applications
• 1.8V drive
• Low on-resistance : R_on = 47mΩ (max.) (@V_GS = 1.8V)
: R_on = 35mΩ (max.) (@V_GS = 2.5V)
: R_on = 31mΩ (max.) (@V_GS = 4.0V)
Absolute Maximum Ratings (Ta = 25°C)
SSM3K309T
Unit: mm
Characteristic
Symbol
Rating
Unit
Drain–source voltage
V_DS
20
V
Gate–source voltage
V_GSS
±12
V
Drain current
DC
I_D
Pulse
I_DP
4.7
A
9.4
Drain power dissipation
P_D (Note 1)
700
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
TY Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm²)
Electrical Characteristics (Ta = 25°C)
Weight: 10mg (typ.)
Characteristic
Drain–source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Drain–source forward voltage
Note2: Pulse test
Symbol
Test Condition
V _{(BR) DSS}
V _{(BR) DSX}
I_DSS
I_GSS
V_th
|Y_fs|
R_{DS (ON)}
C_iss
C_oss
C_rss
t_on
t_off
I_D = 1 mA, V_GS = 0
I_D = 1 mA, V_GS = -12 V
V_DS =20 V, V_GS = 0
V_GS = ±12 V, V_DS = 0
V_DS = 3 V, I_D = 1 mA
V_DS = 3 V, I_D = 4.0A (Note2)
I_D = 4.0 A, V_GS = 4.0 V (Note2)
I_D = 3.0 A, V_GS = 2.5 V (Note2)
I_D = 1.0 A, V_GS = 1.8 V (Note2)
V_DS = 10 V, V_GS = 0, f = 1 MHz
V_DS = 10 V, V_GS = 0, f = 1 MHz
V_DS = 10 V, V_GS = 0, f = 1 MHz
V_DD = 10 V, I_D = 2A
V_GS = 0~2.5 V, R_G = 4.7 Ω
V_DSF
I_D = -4.7 A, V_GS = 0
(Note2)
Min
20
12
⎯
⎯
0.35
13
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
25
22
25
30
1020
175
160
23
34
-0.85
Max Unit
⎯
V
⎯
1
μA
±1
μA
1.0
V
⎯
S
31
35 mΩ
47
⎯
pF
⎯
pF
⎯
pF
⎯
ns
⎯
-1.2
V
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