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SSM3K303T Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – High Speed Switching Applications | |||
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Product specification
SSM3K303T
High Speed Switching Applications
⢠4 V drive
⢠Low ON-resistance:
Ron = 120 m⦠(max) (@VGS = 4V)
Ron = 83 m⦠(max) (@VGS = 10V)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristic
Symbol
Rating
Unit
Drainâsource voltage
VDS
30
V
Gateâsource voltage
VGSS
± 20
V
Drain current
DC
ID
Pulse
IDP
2.9
A
5.8
Drain power dissipation
PD (Note 1)
700
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
â55~150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
TY Semiconductor Reliability Handbook (âHandling
Precautionsâ/âDerating Concept and Methodsâ) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm à 25.4 mm à 1.6 t, Cu Pad: 645 mm2 )
Weight: 10 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Drainâsource breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drainâsource ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
GateâSource Charge
GateâDrain Charge
Switching time
Turn-on time
Turn-off time
Drainâsource forward voltage
Note2: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
V (BR) DSS ID = 1 mA, VGS = 0
30
â¯
â¯
V
IDSS
VDS = 30 V, VGS = 0
â¯
â¯
1
μA
IGSS
VGS = ± 20 V, VDS = 0
â¯
â¯
±1
μA
Vth
VDS = 5 V, ID = 1 mA
1.1
â¯
2.6
V
âYfsâ
VDS = 5 V, ID = 1.5 A
(Note2) 2.5
4.9
â¯
S
RDS (ON)
ID = 1.5 A, VGS = 10 V
ID = 1.0 A, VGS = 4 V
(Note2)
â¯
(Note2)
â¯
64
83
mΩ
88
120
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
â¯
180
â¯
pF
Coss
VDS = 10 V, VGS = 0, f = 1 MHz
â¯
100
â¯
pF
Crss
VDS = 10 V, VGS = 0, f = 1 MHz
â¯
38
â¯
pF
Qg
Qgs
VDS = 15 V, IDS= 2.9 A
VGS = 4 V
Qgd
â¯
3.3
â¯
â¯
1.4
â¯
nC
â¯
1.9
â¯
ton
VDD = 10 V, ID = 1.5 A,
toff
VGS = 0 to 4 V, RG = 10 Ω
â¯
13
â¯
ns
â¯
14
â¯
VDSF
ID = â 2.9 A, VGS = 0 V
(Note2) ⯠â 0.9 â 1.25 V
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sales@twtysemi.com
4008-318-123
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