SSM3K301T Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – Silicon N-Channel MOS Type Power Management Switch Applications

Product specification
Power Management Switch Applications
High-Speed Switching Applications
• 1.8 V drive
• Low ON-resistance:
R_on = 110 mΩ (max) (@V_GS = 1.8 V)
R_on = 74 mΩ (max) (@V_GS = 2.5 V)
R_on = 56 mΩ (max) (@V_GS = 4.0 V)
Absolute Maximum Ratings (Ta = 25°C)
SSM3K301T
Unit: mm
Unit: mm
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
20
V
Gate-Source voltage
V_GSS
± 12
V
Drain current
DC
I_D
Pulse
I_DP
3.5
A
7.0
Drain power dissipation
P_{D (Note 1)}
700
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
TY Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm² )
Electrical Characteristics (Ta = 25°C)
Weight: 10 mg (typ.)
Characteristics
Drain-Source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Turn-on time
Turn-off time
Drain-Source forward voltage
Note 2: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
V _{(BR) DSS}
V _{(BR) DSX}
I_D = 1 mA, V_GS = 0
I_D = 1 mA, V_GS = −12 V
20
⎯
⎯
V
12
⎯
⎯
I_DSS
V_DS = 20 V, V_GS = 0
⎯
⎯
1
μA
I_GSS
V_GS = ±12 V, V_DS = 0
⎯
⎯
±1
μA
V_th
V_DS = 3 V, I_D = 1 mA
0.4
⎯
1.0
V
⏐Y_fs⏐
V_DS = 3 V, I_D = 2.0 A
(Note 2)
6
10
⎯
S
I_D = 2.0 A, V_GS = 4.0 V
(Note 2)
⎯
44
56
R_{DS (ON)} I_D = 1.0 A, V_GS = 2.5 V
(Note 2)
⎯
53
74
mΩ
I_D = 0.5 A, V_GS = 1.8 V
(Note 2)
⎯
70
110
C_iss
⎯
320
⎯
C_oss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯
62
⎯
pF
C_rss
⎯
51
⎯
Q_g
Q_gs
V_DS = 10 V, I_DS= 3.5 A
V_GS = 4 V
Q_gd
⎯
4.8
⎯
⎯
3.3
⎯
nC
⎯
1.5
⎯
t_on
V_DD = 10 V, I_D = 2 A,
t_off
V_GS = 0~2.5 V, R_G = 4.7 Ω
⎯
18
⎯
ns
⎯
14
⎯
V_DSF
I_D = −3.5 A, V_GS = 0 V
(Note 2) ^⎯ −0.85 −1.2
V
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