SSM3K17FU Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

High Speed Switching Applications
Analog Switch Applications
· Suitable for high-density mounting due to compact package
· High drain-source voltage
· High speed switching
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
50
V
Gate-Source voltage
V_GSS
±7
V
Drain current
DC
Pulse
I_D
100
mA
I_DP
200
Drain power dissipation (Ta = 25°C)
P_D (Note)
150
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55~150
°C
Note: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm² × 3)
0.6 mm
1.0 mm
Product specification
SSM3K17FU
Unit: mm
Weight: 6 mg (typ.)
Marking
3
DM
1
2
Equivalent Circuit
3
1
2
This transistor is a electrostatic sensitive device. Please handle with caution.
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