SSM3K14T Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

DC-DC Converter
High Speed Switching Applications
· Small Package
· Low ON-resistance: Ron = 39 mΩ (max) (@VGS = 10 V)
: Ron = 57 mΩ (max) (@VGS = 4.5 V)
· High speed: ton = 24 ns (typ.)
: toff = 19 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
V_DS
30
V
Gate-Source voltage
V_GSS
±20
V
Drain current
DC
I_D
4.0
A
Pulse
I_DP (Note 2)
8.0
Drain power dissipation (Ta = 25°C)
P_D (Note 1)
0.7
W
t = 10 s
1.25
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
-55~150
°C
Note 1: Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm²)
Note 2: The pulse width limited by max channel temperature.
Marking
3
Equivalent Circuit
3
Product specification
SSM3K14T
Unit: mm
Weight: 10 mg (typ.)
KDK
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to
the board material, board area, board thickness and pad area, and are also affected by the environment in
which the product is used. When using this device, please take heat dissipation fully into account.
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