SSM3K12T Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – CategoryTOSHIBA Field Effect Transistor Silicon N Channel MOS Type/Category

SMD Type
Product specification
SSM3K12T
Unit: mm
• Small Package
• Low ON-resistance
• High speed
: R_on = 95 mΩ (max) (@V_GS = 10 V)
: R_on = 145 mΩ (max) (@V_GS = 4.5 V)
: t_on = 21 ns
: t_off = 16 ns
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
V_DS
30
V
V_GSS
±20
V
Drain current
DC
I_D
3.0
A
Pulse
I_DP (Note 2)
6.0
Drain power dissipation (Ta = 25°C)
P_D (Note 1)
0.7
W
t = 10 s
1.25
Channel temperature
Storage temperature range
T_ch
150
°C
T_stg
−55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 10 mg (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the TY Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm²)
Note 2: The pulse width limited by max channel temperature.
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance R_{th (ch-a)} and the drain power dissipation P_D vary according to
the board material, board area, board thickness and pad area, and are also affected by the environment in
which the product is used. When using this device, please take heat dissipation fully into account.
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