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SSM3J306T Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – Power management switch Applications | |||
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SMD Type
Product specification
SSM3J306T
⢠4 V drive
⢠Low ON-resistance:
Ron = 225 m⦠(max) (@VGS = â4 V)
Ron = 117 m⦠(max) (@VGS = â10 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drainâsource voltage
VDS
â30
V
Gateâsource voltage
VGSS
± 20
V
Drain current
DC
ID
Pulse
IDP
â2.4
A
â4.8
Drain power dissipation
PD (Note 1)
700
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
â55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
TY Semiconductor Reliability Handbook (âHandling
Precautionsâ/âDerating Concept and Methodsâ) and individual
Note 1:
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Mounted on an FR4 board.
(25.4 mm à 25.4 mm à 1.6 t, Cu Pad: 645 mm2 )
Electrical Characteristics (Ta = 25°C)
Weight: 10 mg (typ.)
Characteristic
Symbol
Test Condition
Min Typ. Max Unit
Drainâsource breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drainâsource ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Turn-on time
Turn-off time
Drainâsource forward voltage
Note 2: Pulse test
V (BR) DSS
V (BR) DSX
ID = â1 mA, VGS = 0
ID = â1 mA, VGS = +20 V
â30
â¯
â¯
V
â15
â¯
â¯
IDSS
VDS = â30 V, VGS = 0
â¯
â¯
â1
μA
IGSS
VGS = ±16 V, VDS = 0
â¯
â¯
±1
μA
Vth
VDS = â5 V, ID = â1 mA
â1.2
â¯
â2.6
V
âYfsâ
VDS = â5 V, ID =â 1 A
(Note 2) 1.6
3.1
â¯
S
RDS (ON)
Ciss
ID = â1 A, VGS = â10 V
ID = â0.5 A, VGS = â4 V
(Note 2)
â¯
80
117
mΩ
(Note 2)
â¯
160 225
â¯
280
â¯
Coss
VDS = â15 V, VGS = 0, f = 1 MHz
â¯
80
â¯
pF
Crss
â¯
45
â¯
Qg
Qgs
VDS = -15 V, IDS= -2.4 A
VGS = -4 V
Qgd
â¯
2.5
â¯
â¯
1.3
â¯
nC
â¯
1.2
â¯
ton
VDD = â15 V, ID = â1 A,
toff
VGS = 0 to â4 V, RG = 10 â¦
â¯
16
â¯
ns
â¯
35
â¯
VDSF
ID = 2.4 A, VGS = 0 V
(Note 2) â¯
0.8
1.2
V
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