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SSM3J304T Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – Field-Effect Transistor Silicon P-Channel MOS Type Power Management Switch Applications High-Speed Switching Applications | |||
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SMD Type
Product specification
SSM3J304T
⢠1.8 V drive
⢠Low ON-resistance: Ron = 297 m⦠(max) (@VGS = -1.8 V)
Ron = 168 m⦠(max) (@VGS = -2.5 V)
Ron = 127 m⦠(max) (@VGS = -4.0 V)
Absolute Maximum Ratings (Ta = 25ËC)
Unit: mm
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDS
-20
V
Gate-source voltage
VGSS
±8
V
Drain current
DC
ID
Pulse
IDP
-2.3
A
-4.6
Drain power dissipation
PD (Note 1)
700
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
â55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
TY Semiconductor Reliability Handbook (âHandling
Weight: 10 mg (typ.)
Precautionsâ/âDerating Concept and Methodsâ) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
(25.4 mm à 25.4 mm à 1.6 t, Cu Pad: 645 mm2)
Electrical Characteristics (Ta = 25°C)
Characteristic
Drain-source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Drain-source forward voltage
Note 2: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
V (BR) DSS ID = -1 mA, VGS = 0
V (BR) DSX ID = -1 mA, VGS = +8 V
-20
â¯
â¯
V
-12
â¯
â¯
IDSS
VDS = -20 V, VGS = 0
â¯
â¯
-10
μA
IGSS VGS = ±8 V, VDS = 0
â¯
â¯
±1
μA
Vth
VDS = -3 V, ID = -1 mA
-0.3
â¯
-1.0
V
âYfsâ VDS = -3 V, ID = -1 A
(Note 2) 2.4
4
â¯
S
ID = -1.0 A, VGS = -4 V
(Note 2) â¯
88
127
RDS (ON) ID = -0.5 A, VGS = -2.5 V
(Note 2) â¯
120 168 mΩ
ID = -0.2 A, VGS = -1.8 V
(Note 2) â¯
172 297
Ciss
â¯
335
â¯
Coss
VDS = -10 V, VGS = 0, f = 1 MHz
â¯
70
â¯
pF
Crss
â¯
56
â¯
ton
VDD = -10 V, ID = -1A,
toff
VGS = 0 ~ -2.5 V, RG = 4.7 Ω
â¯
20
â¯
ns
â¯
20
â¯
VDSF ID = 2.3 A, VGS = 0
(Note 2)
â¯
0.85 1.2
V
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