SSM3J15F Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications

SMD Type
Product specification
SSM3J15F
• Small package
• Low ON resistance : R_on = 12 Ω (max) (@V_GS = −4 V)
: R_on = 32 Ω (max) (@V_GS = −2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
+0.5
2.5-0.3
+0.25
1.5-0.15
Characteristics
Symbol
Rating
Unit
1
Drain-Source voltage
V_DS
−30
V
2
3
Gate-Source voltage
V_GSS
±20
V
Drain current
DC
Pulse
I_D
−100
mA
I_DP
−200
Drain power dissipation (Ta = 25°C)
P_D
200
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55~150
°C
1.Gate
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
S-MINI
2.Source
3.Drain
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 0.012g(typ.)
TY Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Marking
3
Equivalent Circuit (top view)
3
DQ
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
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