SSM3J14T Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)

SMD Type
Product specification
SSM3J14T
Power Management Switch
DC-DC Converters
· Suitable for high-density mounting due to compact package
· Low on Resistance: Ron = 145 mΩ (max) (@VGS = −4.5 V)
: Ron = 85 mΩ (max) (@VGS = −10 V)
· High-speed switching
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
V_DS
-30
V
V_GSS
±20
V
I_D
-2.7
I_DP
(Note 2)
-5.4
A
P_D t = 10 s
1.25
W
(Note 1)
0.7
T_ch
150
°C
T_stg
-55 to 150
°C
Note 1: Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm²)
Note 2: The pulse width limited by maximum channel temperature.
Marking
3
Equivalent Circuit
3
Unit: mm
Weight: 10 mg (typ.)
KDL
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the
board material, board area, board thickness and pad area, and are also affected by the environment in which the
product is used. When using this device, please take heat dissipation fully into account
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