SSM3J01F Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications

Product specification
SSM3J01F
High Speed Switching Applications
Unit: mm
• Small package
• Low on resistance : Ron = 0.4 Ω (max) (V_GS = −4 V)
: Ron = 0.6 Ω (max) (V_GS = −2.5 V)
• Low gate threshold voltage
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DS
−30
V
Gate-source voltage
V_GSS
±10
V
Drain current
DC
Pulse
I_D
−700
mA
I_DP
−1400
Drain power dissipation (Ta = 25°C)
P_D
200
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55~150
°C
JEDEC
TO-236MOD
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
TOSHIBA
SC-59
2-3F1F
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 0.012 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the TY Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
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