SS8050 Datasheet, PDF (1/1 Pages) Wing Shing Computer Components – TRANSISTOR (NPN)

Product specification
TO-92 Plastic-Encapsulate Transistors
FEATURES
Power dissipation
PCM : 1 W (TA=25℃)
: 2 W (TC=25℃)
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Junction Temperature
Storage Temperature
Value
40
25
5
1.5
150
-55-150
Units
V
V
V
A
℃
℃
TO-92
1.EMITTER
2.BASE
3.COLLECTOR
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Symbol Test conditions
V(BR)CBO IC=100uA, IE=0
V(BR)CEO IC=0.1mA, IB=0
V(BR)EBO IE=100μA, IC=0
ICBO
VCB=40V, IE=0
ICEO
VCE=20V, IE=0
IEBO
VEB=5V, IC=0
hFE(1) VCE=1V, IC=100mA
hFE(2)
VCE=1V, IC=800mA
VCE(sat) IC=800mA, IB=80mA
VBE(sat) IC=800mA, IB=80mA
VBE
VCE=1V, IC=10mA
fT
VCE=10V, IC=50mA,f=30MHZ
MIN TYP MAX UNIT
40
V
25
V
5
V
0.1
μA
0.1
μA
0.1
μA
85
400
40
0.5
V
1.2
V
1
V
100
MHz
CLASSIFICATION OF hFE(1)
Rank
Range
B
85-160
C
120-200
D
160-300
D3
300-400
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