SS24 Datasheet, PDF (1/2 Pages) ON Semiconductor – Surface Mount Schottky Power Rectifier

Product specification
SS22 thru SS26
DO-214AA (SMB)
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
T_J max.
2.0 A
20 V to 60 V
75 A
0.50 V, 0.70 V
125 °C, 150 °C
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, dc-to-dc converters, and polarity
protection applications.
MECHANICAL DATA
Case: DO-214AA (SMB)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL SS22
SS23
SS24
SS25
SS26
Device marking code
S2
S3
S4
S5
S6
Maximum repetitive peak reverse voltage
V_RRM
20
30
40
50
60
Maximum RMS voltage
V_RMS
14
21
28
35
42
Maximum DC blocking voltage
V_DC
20
30
40
50
60
Max. average forward rectified current at T_L (Fig. 1)
I_F(AV)
2.0
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
75
Non-repetitive avalanche energy at T_A = 25 °C,
I_AS = 2.0 A, L = 10 mH
E_AS
20
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 kΩ
VC
8.0
Voltage rate of change (rated V_R)
Operating junction temperature range
Storage temperature range
dV/dt
T_J
T_STG
10 000
- 65 to + 125
- 65 to + 150
- 65 to + 150
UNIT
V
V
V
A
A
mJ
KV
V/µs
°C
°C
http://www.twtysemi.com
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4008-318-123
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