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SI9926BDY Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – Dual N-Channel MOSFET | |||
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SSMMDD TTyyppee
â Features
â RDS(on) = 0.027 Ω @ VGS = 4.5 V
â RDS(on) = 0.036 Ω @ VGS = 2.5 V.
MOSFICIEC
Product specification
SI9926BDY
SOP-8
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
D1
D2
G1
S1
G2
S2
â Absolute Maximum Ratings Ta = 25â
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation @TA = 25â
@TA = 70â
Thermal Resistance,Junction-to-Ambient
Jumction temperature and Storage temperature
Symbol
VDS
VGS
ID
IDM
PD
RθJA
Tj.Tstg
10 sec
Steady State
20
±10
8.2
6.2
30
2.0
1.14
1.3
0.72
110
-55 to +150
Unit
V
V
A
A
W
W
â/W
â
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sales@twtysemi.com
4008-318-123
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