SI4410DY Datasheet, PDF (1/2 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

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MOSFIECICT
Product specification
SI4410DY
■ Features
● RDS(ON)≤0.0135Ω @VGS=10V
● RDS(ON)≤0.02Ω @VGS=4.5V
● Low gate charge.
● Fast switching speed.
S1
S2
S3
G4
D
8D
7D
G
6D
5D
S
SOP-8
S
D
S
D
S
D
G
D
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Current
-Continuous
(NOTE 1)
-Pulsed
(NOTE 2)
Power Dissipation
(NOTE 1)
Thermal Resistance,Junction- to-Ambient
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
RθJA
Tj.Tstg
Rating
30
±20
10
50
2.5
50
-55 to 150
Unit
V
V
A
A
W
℃/W
℃
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