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SI3481DV Datasheet, PDF (1/2 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET | |||
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PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.048 @ VGS = â10 V
â30
0.079 @ VGS = â4.5 V
ID (A)
â5.3
â4.1
Product specification
SI3481DV
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Load Switch
3 mm
TSOP-6
Top View
1
6
2
5
3
4
2.85 mm
Ordering Information: Si3481DV-T1âE3 (Lead Free)
(4) S
(3) G
(1, 2, 5, 6) D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
â30
"20
â5.3
â4.0
â4.2
â3.2
â20
â1.7
â0.95
2.0
1.14
1.3
0.73
â55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1â x 1â FR4 Board.
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
55
90
30
Maximum
62.5
110
36
Unit
_C/W
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