SI3460DV Datasheet, PDF (1/2 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

Product specification
SI3460DV
PRODUCT SUMMARY
V_DS (V)
20
r_DS(on) (W)
0.027 @ V_GS = 4.5 V
0.032 @ V_GS = 2.5 V
0.038 @ V_GS = 1.8 V
I_D (A)
6.8
6.3
5.7
FEATURES
D TrenchFETr Power MOSFET
D 100% R_g Tested
3 mm
TSOP-6
Top View
1
6
2
5
3
4
2.85 mm
Ordering Information: Si3460DV-T1
(1, 2, 5, 6) D
(3) G
(4) S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
"8
6.8
5.1
5.4
4.1
20
1.7
0.9
2.0
1.1
1.3
0.73
-55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
45
90
25
Maximum
62.5
110
30
Unit
V
A
W
_C
Unit
_C/W
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