SI3456CDV Datasheet, PDF (1/2 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Product specification
SI3456CDV
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.034 at V_GS = 10 V
30
0.052 at V_GS = 4.5 V
I_D (A)^d
7.8
6.3
Q_g (Typ)
4 nC
FEATURES
• TrenchFET^® Power MOSFET
APPLICATIONS
• Load Switch
• HDD
RoHS
COMPLIANT
TSOP-6
Top View
D
1
6
D
3 mm D
2
5
D
G
3
4
S
2.85 mm
Ordering Information: Si3456CDV-T1-E3 (Lead (Pb)-free)
Marking Code
AP XXX
Lot Traceability
and Date Code
Part # Code
D
(1, 2, 5, 6)
G
(3)
(4)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
Operating Junction and Storage Temperature Range
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
Soldering Recommendations (Peak Temperature)
Limit
30
± 20
7.7
6.2
6.1^{a, b}
4.9^{a, b}
20
2.9
1.7^{a, b}
3.3
2.1
2^{a, b}
1.3^{a, b}
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, c}
Maximum Junction-to-Foot (Drain)
t≤5s
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 110 °C/W.
d. Based on T_C = 25 °C.
Symbol
R_thJA
R_thJF
Typical
53
32
Maximum
62.5
38
Unit
V
A
W
°C
Unit
°C/W
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