SI2336DS Datasheet, PDF (1/2 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

Product specification
SI2336DS
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
0.042 at V_GS = 4.5 V
30
0.046 at V_GS = 2.5 V
0.052 at V_GS = 1.8 V
I_D (A)^a
5.2
4.9
4.1
Q_g (Typ.)
5.7 nC
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2336DS (N4)*
* Marking Code
Ordering Information: Si2336DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converters
• Boost Converters
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
±8
T_C = 25 °C
5.2
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
4.1
4.3^{b, c}
T_A = 70 °C
3.5^{b, c}
A
Pulsed Drain Current
I_DM
20
T_C = 25 °C
Continuous Source-Drain Diode Current
T_A = 25 °C
I_S
1.5
1.0^{b, c}
T_C = 25 °C
1.8
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
1.1
1.25^{b, c}
W
T_A = 70 °C
0.8^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)^{d, e}
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 130 °C/W.
Symbol
R_thJA
R_thJF
Typical
80
55
Maximum
100
70
Unit
°C/W
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