SI2327DS Datasheet, PDF (1/2 Pages) Vishay Siliconix – P-Channel 200-V (D-S) MOSFET

Product specification
SI2327DS
PRODUCT SUMMARY
V_DS (V)
−200
r_DS(on) (W)
2.35 @ V_GS = −10 V
2.45 @ V_GS = −6.0 V
I_D (A)
−0.49
−0.48
Q_g (Typ)
8.0
FEATURES
D TrenchFETr Power MOSFET
D Ultra Low On-Resistance
D Small Size
APPLICATIONS
D Active Clamp Circuits in DC/DC Power
Supplies
TO-236
(SOT-23)
G1
S2
3D
Ordering Information: Si2327DS -T1—E3
Top View
Si2327DS (D7)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
V_DS
−200
V_GS
$20
Continuous Drain Current (T_J = 150_C)^{a, b}
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^{a, b}
Single-Pluse Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation^{a, b}
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
L = 1.0 mH
T_A = 25_C
T_A = 70_C
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
−0.49
−0.39
−1.0
1.25
0.8
−1.0
4.0
0.8
−55 to 150
−0.38
−0.31
−0.6
0.75
0.48
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t v 5 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
Symbol
R_thJA
R_thJF
Typical
75
120
40
Maximum
100
166
50
Unit
_C/W
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