SI2316BDS Datasheet, PDF (1/2 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Product specification
SI2316BDS
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.050 at V_GS = 10 V
30
0.080 at V_GS = 4.5 V
I_D (A)^a
4.5
3.4
Q_g (Typ)
3.16 nC
FEATURES
• TrenchFET^® Power MOSFET
• PWM Optimized
• 100 % R_g tested
APPLICATIONS
• Battery Switch
• DC/DC Converter
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2316DS (M6)*
*Marking Code
Ordering Information: Si2316BDS-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
≤ 5 sec
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 5 sec.
d. Maximum under Steady State conditions is 130 °C/W.
Symbol
R_thJA
R_thJF
Typical
80
60
Limit
30
± 20
4.5
3.6
3.9^{b, c}
3.13^{b, c}
20
1.39
1.04^{b, c}
1.66
1.06
1.25^{b, c}
0.8^{b, c}
- 55 to 150
Maximum
100
75
RoHS
COMPLIANT
Unit
V
A
W
°C
Unit
°C/W
http://www.twtysemi.com
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4008-318-123
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