SI2315BDS Datasheet, PDF (1/2 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

Product specification
SI2315BDS
PRODUCT SUMMARY
V_DS (V)
- 12
r_DS(on) (W)
0.050 @ V_GS = - 4.5 V
0.065 @ V_GS = - 2.5 V
0.100 @ V_GS = - 1.8 V
I_D (A)
- 3.85
- 3.4
- 2.7
TO-236
(SOT-23)
G1
S2
3D
Ordering Information: Si2315BDS-T1
Top View
Si2315BDS *(M5)
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current^a
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A= 25_C
T_A= 70_C
T_A= 25_C
T_A= 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
- 3.85
- 3.0
- 1.0
1.19
0.76
- 12
"8
- 12
- 55 to 150
- 3.0
- 2.45
- 0.62
0.75
0.48
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on FR4 Board.
b. t v5 sec.
t  5 sec.
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
85
130
60
Maximum
105
166
75
Unit
_C/W
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