SI2314EDS Datasheet, PDF (1/2 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

Product specification
SI2314EDS
PRODUCT SUMMARY
V_DS (V)
20
r_DS(on) (W)
0.033 @ V_GS = 4.5 V
0.040 @ V_GS = 2.5 V
0.051 @ V_GS = 1.8 V
I_D (A)
4.9
4.4
3.9
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2314EDS (C4)*
*Marking Code
FEATURES
D TrenchFETr Power MOSFET
D ESD Protected: 3000 V
APPLICATIONS
D LI-lon Battery Protection
D
3 kW
G
S
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current^b
Avalanche Current^b
Single Avalanche Energy
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A= 25_C
T_A= 70_C
L = 0.1 mH
T_A= 25_C
T_A= 70_C
V_DS
V_GS
I_D
I_DM
I_AS
E_AS
I_S
P_D
T_J, T_stg
20
"12
4.9
3.77
3.9
3.0
15
15
11.25
1.0
1.25
0.75
0.80
0.48
–55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
75
120
40
Maximum
100
166
50
Unit
V
A
mJ
A
W
_C
Unit
_C/W
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4008-318-123
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