SI2311DS Datasheet, PDF (1/2 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

PRODUCT SUMMARY
V_DS (V)
–8
r_DS(on) (W)
0.045 @ V_GS = –4.5 V
0.072 @ V_GS = –2.5 V
0.120 @ V_GS = –1.8 V
I_D (A)
–3.5
–2.8
–2.0
Product specification
SI2311DS
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Load Switch
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2311DS (C1)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
V_DS
–8
V_GS
"8
Continuous Drain Current (T_J = 150_C)^{a, b}
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^{a, b}
Maximum Power Dissipation)^{a, b}
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
I_D
I_DM
I_S
P_D
T_J, T_stg
–3.5
–3.0
–2.8
–2.4
–10
–0.8
–0.6
0.96
0.71
0.62
0.46
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (drain)
Notes
a. Surface Mounted on FR4 Board.
b. Pulse width limited by maximum junction temperature.
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
100
140
60
Maximum
130
175
75
Unit
_C/W
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