SI2309CDS Datasheet, PDF (1/2 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET

Product specification
Si2309CDS
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
- 60
0.345 at V_GS = - 10 V
0.450 at V_GS = - 4.5 V
TO-236
(SOT-23)
I_D (A)^d
- 1.6
- 1.4
Q_g (Typ.)
2.7 nC
FEATURES
• Halogen-free Option Available
• TrenchFET^® Power MOSFET
APPLICATIONS
• Load Switch
G1
3D
S
S2
Top View
Si2309CDS (N9)*
* Marking Code
Ordering Information: Si2309CDS-T1-E3 (Lead (Pb)-free)
Si2309CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)^{a, b}
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current (10 µs Pulse Width)
I_DM
Single Pulse Avalanche Current
L = 0.1 mH
I_AS
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
Soldering Recommendations (Peak Temperature)^c
Limit
- 60
± 20
- 1.6
- 1.3
- 1.2^{a, b}
- 1.0^{a, b}
-8
-5
- 1.4
- 0.9^{a, b}
1.7
1.1
1.0^{a, b}
0.67^{a, b}
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, c}
t≤5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under Steady State conditions is 166 °C/W.
d. When T_C = 25 °C.
Symbol
R_thJA
R_thJF
Typical
92
58
Maximum
120
73
Unit
V
A
W
°C
Unit
°C/W
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