SI2307CDS Datasheet, PDF (1/2 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Product specification
SI2307CDS
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
- 30
0.088 at V_GS = - 10 V
0.138 at V_GS = - 4.5 V
TO-236
(SOT-23)
I_D (A)^{a, b}
- 2.7
- 2.2
Q_g (Typ.)
4.1 nC
FEATURES
• Halogen-free Option Available
• TrenchFET^® Power MOSFET
APPLICATIONS
• Load Switch for Portable Devices
G1
S2
3D
Top View
Si2307CDS (N7)*
* Marking Code
Ordering Information: Si2307CDS-T1-E3 (Lead (Pb)-free)
Si2307CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)^{a, b}
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current (10 µs Pulse Width)
I_DM
Continuous Source-Drain Diode Current^{a, b}
T_C = 25 °C
T_A = 25 °C
I_S
T_C = 25 °C
Maximum Power Dissipation^{a, b}
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
Soldering Recommendations (Peak Temperature)^c
Limit
- 30
± 20
- 3.5
- 2.8
- 2.7^{a, b}
- 2.2^{a, b}
- 12
- 1.5
- 0.91^{a, b}
1.8
1.14
1.1^{a, b}
0.7^{a, b}
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, c}
t≤5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under Steady State conditions is 166 °C/W.
Symbol
R_thJA
R_thJF
Typical
90
55
Maximum
115
70
RoHS
COMPLIANT
Unit
V
A
W
°C
Unit
°C/W
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