SI2304DS Datasheet, PDF (1/2 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

PRODUCT SUMMARY
V_DS (V)
30
r_DS(on) (W)
0.117 @ V_GS = 10 V
0.190 @ V_GS = 4.5 V
I_D (A)
2.5
2.0
Product specification
SI2304DS
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2304DS (A4)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A= 25_C
T_A= 70_C
T_A= 25_C
T_A= 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"20
2.5
2.0
10
1.25
1.25
0.80
–55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Ambient^c
Notes
a. Surface Mounted on FR4 Board, t v 5 sec.
b. Pulse width limited by maximum junction temperature.
c. Surface Mounted on FR4 Board.
Symbol
R_thJA
Limit
100
166
Unit
V
A
W
_C
Unit
_C/W
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