SI2302CDS Datasheet, PDF (1/2 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

Product specification
SI2302CDS
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
20
0.057 at V_GS = 4.5 V
0.075 at V_GS = 2.5 V
I_D (A)
2.9
2.6
Q_g (Typ.)
3.5
FEATURES
• Halogen-free Option Available
• TrenchFET^® Power MOSFET
APPLICATIONS
• Load Switching for Portable Devices
• DC/DC Converter
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2302CDS (N2)*
* Marking Code
Ordering Information: Si2302CDS-T1-E3 (Lead (Pb)-free)
Si2302CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
V_DS
20
Gate-Source Voltage
V_GS
±8
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
2.9
2.6
2.3
2.1
Pulsed Drain Current^b
I_DM
10
Continuous Source Current (Diode Conduction)^a
I_S
0.72
0.6
Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
0.86
0.71
0.55
0.46
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
RoHS
COMPLIANT
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot
t≤5s
Steady State
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Pulse width limited by maximum junction temperature.
Symbol
R_thJA
R_thJF
Typical
120
140
62
Maximum
145
175
78
Unit
°C/W
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 2