SI2301CDS Datasheet, PDF (1/2 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

Product specification
SI2301CDS
MOSFET PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
I_D (A)^a
0.112 at V_GS = - 4.5 V
- 3.1
- 20
0.142 at V_GS = - 2.5 V
- 2.7
Q_g (Typ.)
3.3 nC
FEATURES
• Halogen-free Option Available
• TrenchFET^® Power MOSFET
APPLICATIONS
• Load Switch
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2301CDS (N1)*
* Marking Code
Ordering Information: Si2301CDS-T1-E3 (Lead (Pb)-free)
Si2301CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current (T_J = 150 °C)
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
I_D
Pulsed Drain Current
T_A = 70 °C
I_DM
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
≤5s
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 175 °C/W.
Symbol
R_thJA
R_thJF
Typical
120
62
Limit
- 20
±8
- 3.1
- 2.5
- 2.3^{b, c}
- 1.8^{b, c}
- 10
- 1.3
- 0.72^{b, c}
1.6
1.0
0.86^{b, c}
0.55^{b, c}
- 55 to 150
Maximum
145
78
RoHS
COMPLIANT
Unit
V
A
W
°C
Unit
°C/W
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